cascadable silicon bipolar mmic amplifier technical data features ? cascadable 50 w gain block ? 3 db bandwidth: dc to 2.3 ghz ? 11.0 db typical gain at 1.0 ghz ? 9.0 dbm typical p 1 db at --1.0 ghz ? unconditionally stable (k>1) ? low cost surface mount plastic package ? tape-and-reel packaging option available [1] MSA-0311 sot-143 package description the MSA-0311 is a low cost silicon bipolar monolithic microwave integrated circuit (mmic) housed in the surface mount plastic sot-143 package. this mmic is designed for use as a general purpose 50 w gain block. typical applications include narrow and broad band if and rf amplifiers in commercial and industrial applications. the msa-series is fabricated using agilents 10 ghz f t , 25 ghz f max , silicon bipolar mmic process which uses nitride self-alignment, ion implantation, and gold metalli- typical biasing configuration c block c block r bias v cc > 7 v v d = 4.7 v rfc (optional) in out msa note: 1. refer to packaging section tape- and-reel packaging for semiconduc- tor devices. zation to achieve excellent performance, uniformity and reliability. the use of an external bias resistor for temperature and current stability also allows bias flexibility.
2 MSA-0311 absolute maximum ratings parameter absolute maximum [1] device current 60 ma power dissipation [2,3] 240 mw rf input power +13 dbm junction temperature 150 c storage temperature C65 to 150 c thermal resistance [2,4] : q jc = 500 c/w notes: 1. permanent damage may occur if any of these limits are exceeded. 2. t case = 25 c. 3. derate at 2.0 mw/ c for t c > 30 c. 4. see measurements section thermal resistance for more information. part number ordering information part number no. of devices container MSA-0311-tr1 3000 7" reel MSA-0311-blk 100 antistatic bag for more information, see tape and reel packaging for semiconductor devices. electrical specifications [1] , t a = 25 c symbol parameters and test conditions: i d = 35 ma, z o = 50 w units min. typ. max. g p power gain (|s 21 | 2 ) f = 0.1 ghz db 11.5 f = 1.0 ghz 9.0 11.0 d g p gain flatness f = 0.1 to 1.6 ghz db 0.7 f 3 db 3 db bandwidth ghz 2.3 input vswr f = 0.1 to 3.0 ghz 1.5:1 output vswr f = 0.1 to 3.0 ghz 1.7:1 nf 50 w noise figure f = 1.0 ghz db 6.0 p 1 db output power at 1 db gain compression f = 1.0 ghz dbm 9.0 ip 3 third order intercept point f = 1.0 ghz dbm 22.0 t d group delay f = 1.0 ghz psec 140 v d device voltage t c = 25 c v 3.8 4.7 5.6 dv/dt device voltage temperature coefficient mv/ c C8.0 notes: 1. the recommended operating current range for this device is 20 to 40 ma. typical gain performance as a function of current is on the following page. vswr
3 typical performance, t a = 25 c (unless otherwise noted) g p (db) 0.1 0.3 0.5 1.0 3.0 6.0 frequency (ghz) figure 1. typical power gain vs. frequency, i d = 35 ma. 0 2 4 6 8 10 12 14 gain flat to dc i d (ma) figure 2. power gain vs. current. 4 6 8 10 12 14 g p (db) 15 25 30 40 50 35 20 5.5 5.0 6.0 6.5 7.0 nf (db) frequency (ghz) figure 4. noise figure vs. frequency, i d = 35 ma. 0.1 0.2 0.3 0.5 2.0 1.0 4.0 0.1 0.2 0.3 0.5 2.0 1.0 frequency (ghz) figure 3. output power at 1 db gain compression vs. frequency, i d = 35 ma. 0 3 6 9 12 15 18 p 1 db (dbm) 0.1 ghz 1.0 ghz 2.0 ghz MSA-0311 typical scattering parameters (z o = 50 w , t a = 25 c, i d = 35 ma) freq. ghz mag ang db mag ang db mag ang mag ang 0.1 .06 25 11.7 3.84 175 C17.9 .127 2 .24 C7 0.2 .07 31 11.7 3.83 170 C17.9 .128 3 .23 C13 0.4 .07 38 11.6 3.78 159 C17.8 .129 6 .24 C28 0.6 .07 30 11.4 3.72 149 C17.6 .132 18 .24 C40 0.8 .08 21 11.2 3.65 140 C17.3 .136 11 .24 C53 1.0 .08 10 11.0 3.56 130 C17.0 .141 13 .24 C65 1.5 .09 C32 10.4 3.31 106 C15.9 .160 17 .24 C91 2.0 .09 C105 9.5 2.99 84 C14.9 .179 16 .23 C115 2.5 .13 C151 8.5 2.66 70 C14.1 .197 19 .23 C133 3.0 .19 C176 7.4 2.35 51 C13.5 .212 15 .22 C145 3.5 .24 166 6.2 2.04 35 C13.0 .224 11 .23 C151 4.0 .27 152 5.1 1.80 20 C12.7 .232 6 .24 C151 5.0 .36 114 2.9 1.39 C6 C12.1 .250 C1 .25 C152 6.0 .50 88 0.8 1.10 C28 C11.8 .258 C8 .25 C166 a model for this device is available in the device models section. s 11 s 21 s 12 s 22
www.semiconductor.agilent.com data subject to change. copyright ? 1999 agilent technologies 5965-9567e (11/99) sot-143 package dimensions dimensions are in millimeters (inches) 0.10 (0.004) 0.013 (0.0005) 0.92 (0.036) 0.78 (0.031) ground rf input rf output and bias xxx package marking code 1.40 (0.055) 1.20 (0.047) 2.65 (0.104) 2.10 (0.083) 0.54 (0.021) 0.37 (0.015) 0.60 (0.024) 0.45 (0.018) 2.04 (0.080) 1.78 (0.070) 3.06 (0.120) 2.80 (0.110) 0.15 (0.006) 0.09 (0.003) 1.02 (0.041) 0.85 (0.033) 0.69 (0.027) 0.45 (0.018) ground package marking code is a03
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